intellifet is a registered trademark of diodes incorporated. ZXMS6006DT8Q document number: ds37137 rev. 3 - 2 1 of 8 www.diodes.com june 2014 ? diodes incorporated ZXMS6006DT8Q advance information ? green 60v dual n-channel self pr otected enhancement mode intellifet ? mosfet product summary ? continuos drain source voltage 60v ? on-state resistance 100m ? ? nominal load current (v in = 5v) 2.8a ? clamping energy 210mj description the ZXMS6006DT8Q is a dual self protected low side mosfet with logic level input. it integrates ove r-temperature, over-current, over- voltage (active clamp) and esd protected logic level functionality. the ZXMS6006DT8Q is ideal as a general purpose switch driven from 3.3v or 5v microcontrollers in harsh environments where standard mosfets are not rugged enough. ? lamp driver ? motor driver ? relay driver ? solenoid driver features and benefits ? compact high power dissipation package ? low input current ? logic level input (3.3v and 5v) ? short circuit protection with auto restart ? over voltage protection (active clamp) ? thermal shutdown with auto restart ? over-current protection ? input protection (esd) ? high continuous current rating ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap capable mechanical data ? case: sm-8 ? case material: molded plastic, ?green? molding compound ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ? weight: 0.117 grams (approximate) ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel ZXMS6006DT8Qta zxms6006d 7 12 1,000 notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- an d antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http?//www.diodes.com/products/packages.html. marking information top view sm-8 top view pin-out zxms6006d = product type marking code device symbol top view in1 s1 s2 in2 d1 d1 d 2 d 2 1 zxms 6006d pin 1 d2 s2 in2 d1 s1 in1
intellifet is a registered trademark of diodes incorporated. ZXMS6006DT8Q document number: ds37137 rev. 3 - 2 2 of 8 www.diodes.com june 2014 ? diodes incorporated ZXMS6006DT8Q advance information ? green functional block diagram maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol v alue units continuous drain-source voltage v ds 60 v drain-source voltage for short circuit protection v ds(sc) 16 v continuous input voltage v in -0.5 to +6 v continuous input current @-0.2v v in 6v continuous input current @v in < -0.2v or v in > 6v i in no limit i in 2 ma pulsed drain current @v in = 3.3v ( note 7) i dm 11 a pulsed drain current @v in = 5v ( note 7) i dm 13 a continuous source current (body diode) (note 5) i s 2 a pulsed source current (body diode) i sm 12 a unclamped single pulse inductive energy, t j = +25c, i d = 0.5a, v dd = 24v e as 210 mj electrostatic discharge (human body model) v esd 4000 v charged device model v cdm 1000 v thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol v alue units power dissipation at t a = +25c (notes 5 & 8) linear derating factor p d 1.16 9.28 w mw/c power dissipation at t a = +25c (notes 5 & 9) linear derating factor p d 1.67 13.3 w mw/c power dissipation at t a = +25c (notes 6 & 8) linear derating factor p d 2.13 17 w mw/c thermal resistance, junction to ambient (notes 5 & 8) r ja 108 c/w thermal resistance, junction to ambient (notes 5 & 9) r ja 75 c/w thermal resistance, junction to case (notes 6 & 8) r jc 58.7 c/w thermal resistance, junction to case (note 10) r jc 26.5 c/w operating temperature range t j -40 to +150 c storage temperature range t stg -55 to +150 c notes: 5. for a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm fr 4 board, in still air conditions. 6. for a dual device surface mounted on fr4 pcb measured at t 10sec 7. repetitive rating25mm x 25mm fr4 pcb, d = 0.02, puls e width = 300s ? pulse width limited by junction temperature. refe r to transient thermal impedance graph. 8. for a dual device with one active die. 9. for a dual device with 2 active die running at equal power. 10. thermal resistance from junction to the mounting surface of the drain pin.
intellifet is a registered trademark of diodes incorporated. ZXMS6006DT8Q document number: ds37137 rev. 3 - 2 3 of 8 www.diodes.com june 2014 ? diodes incorporated ZXMS6006DT8Q advance information ? green recommended operating conditions the ZXMS6006DT8Q is optimized for use with c operating from 3.3v and 5v supplies. characteristic symbol min max unit input voltage range v in 0 5.5 v ambient temperature range t a -40 +125 c high level input voltage for mosfet to be on v ih 3 5.5 v low level input voltage for mosfet to be off v il 0 0.7 v peripheral supply voltage (voltage to which load is referred) v p 0 16 v thermal characteristics 110 10m 100m 1 10 25x25x1.6mm fr4 single 1oz cu one active die limited by over-current protection single pulse t amb =25c limited by r ds(on) 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) limit of s/c protection 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 active die derating curve temperature (c) max power dissipation (w) 2 active die 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 25x25x1.6mm fr4 single 1oz cu one active die t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 25x25x1.6mm fr4 single 1oz cu one active die single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
intellifet is a registered trademark of diodes incorporated. ZXMS6006DT8Q document number: ds37137 rev. 3 - 2 4 of 8 www.diodes.com june 2014 ? diodes incorporated ZXMS6006DT8Q advance information ? green electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition static characteristics drain-source clamp voltage v ds(az) 60 65 70 v i d = 10ma off state drain current i dss ? ? 1 a v ds = 12v, v in = 0v ? ? 2 v ds = 36v, v in = 0v input threshold voltage v in(th) 0.7 1 1.5 v v ds = v gs , i d = 1ma input current i in ? 60 100 a v in = +3v ? 120 200 v in = +5v input current while over temperature active - ? ? 400 a v in = +5v static drain-source on-state resistance r ds(on) ? 85 125 m ? v in = +3v, i d = 1a ? 75 100 v in = +5v, i d = 1a continuous drain current (notes 5 & 9) i d 2.0 ? ? a v in = 3v; t a = +25c 2.2 ? ? v in = 5v; t a = +25c continuous drain current (notes 5 & 8) 2.6 ? ? v in = 3v; t a = +25c 2.8 ? ? v in = 5v; t a = +25c current limit (note 11) i d(lim) 4 8 ? a v in = +3v 6 13 ? v in = +5v dynamic characteristics turn on delay time t d(on) ? 8.6 ? s v dd = 12v, i d = 1a, v gs = 5v rise time t r ? 18 ? s turn off delay time t d(off) ? 34 ? s fall time f f ? 15 ? s over-temperature protection thermal overload trip temperature (note 12) t jt +150 +175 ? c ? thermal hysteresis (note 12) f f ? +10 ? c ? notes: 11. the drain current is restricted only when the devi ce is in saturation (see graph ?typical output characteristic?) . this allows the device to be used in the fully on state without interference fr om the current limit. the device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 12. over-temperature protection is designed to prevent device destruction under fault conditions. fault condition s are considered as ?outside? normal operating range, so this part is not designed to withstand over-t emperature for extended periods..
intellifet is a registered trademark of diodes incorporated. ZXMS6006DT8Q document number: ds37137 rev. 3 - 2 5 of 8 www.diodes.com june 2014 ? diodes incorporated ZXMS6006DT8Q advance information ? green typical characteristics 0 1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.00 0.05 0.10 0.15 0.20 -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 012345 0 20 40 60 80 100 120 0.4 0.6 0.8 1.0 0.01 0.1 1 10 3v 2.5v 2v 5v 4.5v 4v 3.5v 3v typical output characteristic t a = 25c v in i d drain current (a) v ds drain-source voltage (v) threshold voltage vs temperature v in = v ds i d = 1ma v th threshold voltage (v) t j junction temperature (c) t j = 150c on-resistance vs input voltage t j = 25c r ds(on) on-resistance ( ) v in input voltage (v) i d = 1a reverse diode characteristic v in = 3v v in = 5v on-resistance vs temperature t j junction temperature (c) r ds(on) on-resistance ( ) input current vs input voltage i in input current ( a) v in input voltage (v) v sd source-drain voltage (v) i s source curent (a) t j =25c t j =150c
intellifet is a registered trademark of diodes incorporated. ZXMS6006DT8Q document number: ds37137 rev. 3 - 2 6 of 8 www.diodes.com june 2014 ? diodes incorporated ZXMS6006DT8Q advance information ? green typical characteristics (cont.) -50 0 50 100 150 200 250 300 0 2 4 6 8 10 12 -50 0 50 100 150 200 250 300 0 2 4 6 8 10 12 051015 0 2 4 6 8 switching speed v in drain-source voltage (v) time ( s) v ds i d =1a v ds v in switching speed drain-source voltage (v) time ( s) i d =1a typical short circuit protection v in = 5v v ds = 15v r d = 0 i d drain current (a) time (ms)
intellifet is a registered trademark of diodes incorporated. ZXMS6006DT8Q document number: ds37137 rev. 3 - 2 7 of 8 www.diodes.com june 2014 ? diodes incorporated ZXMS6006DT8Q advance information ? green package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sm-8 dim min max typ a ? 1.7 ? a1 0.02 0.1 ? b ? 0.7 ? c 0.24 0.32 ? d 6.3 6.7 ? e ? ? 1.53 e1 ? ? 4.59 e 6.7 7.3 ? e1 3.3 3.7 ? l 0.9 ? ? all dimensions in mm dimensions value (in mm) c 1.52 c1 4.6 x 0.95 y 2.80 y1 6.80 15 45 l c e1 e d b ee1 a a1 pin #1 y1 y (8x) x (8x) c c1
intellifet is a registered trademark of diodes incorporated. ZXMS6006DT8Q document number: ds37137 rev. 3 - 2 8 of 8 www.diodes.com june 2014 ? diodes incorporated ZXMS6006DT8Q advance information ? green important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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